ScholarLens Back to search
2006•Unpublished venueRequires access

SPICE Model of SiC JFETs for Circuit Simulations

Yi Wang, Callaway J. Cass, T. P. Chow, Fred Wang, Dushan Boroyevich

Open publisher page 21 citations

Abstract

This paper presents SPICE model for one kind of high voltage transistors-1200 V, 5A SiC JFET. Temperature dependent characterization of the device has been done up to 200 degC. Switching behavior has also been studied at 600 V, 5 A level. Based on both static and dynamic characterizations, this paper focuses on SPICE modeling work of such a device for circuit simulations. The model parameters have been extracted from experimental plots. Simulations are then used to verify the developed compact model. Reasonably good agreement has been obtained between the model and experimental results

About this research paper

What this paper is about

This paper presents SPICE model for one kind of high voltage transistors-1200 V, 5A SiC JFET. Temperature dependent characterization of the device has been done up to 200 degC. Switching behavior has also been studied at 600 V, 5 A level. Based on both static and dynamic characterizations, this paper focuses on SPICE modeling work of such a device for circuit simulations. The model parameters have been extracted from experimental plots. Simulations are then used to verify the developed compact model. Reasonably good agreement has been obtained between the model and experimental results

Why it matters

OpenAlex reports 21 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

This paper presents SPICE model for one kind of high voltage transistors-1200 V, 5A SiC JFET. Temperature dependent characterization of the device has been done up to 200 degC. Switching behavior has also been studied at 600 V, 5 A level. Based on both static and dynamic characterizations, this paper focuses on SPICE modeling work of such a device for circuit simulations. The model parameters have been extracted from experimental plots. Simulations are then used to verify the developed compact model. Reasonably good agreement has been obtained between the model and experimental results

Key concepts: Spice, JFET, Equivalent circuit, Voltage, Electronic circuit simulation, Electronic engineering, Transistor, Silicon carbide

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
SPICE Model of SiC JFETs for Circuit Simulations — Research Paper | ScholarLens