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2020•Unpublished venueRequires access

Modernization of Low-Temperature JFET Models Built into LTspice CAD Systems, Taking into Account the Results of their Experimental Study

Oleg V. Dvornikov, Valentine L. Dziatlau, V. А. Tchekhovski, Nikolay N. Prokopenko, Alexey A. Zhuk, Anna V. Bugakova

Open publisher page 6 citations

Abstract

The results of experimental studies of the current-voltage characteristics (CVC) of silicon n-JFET and p-JFET manufactured at JSC INTEGRAL (Minsk, Belarus) at temperatures from minus 195°C up to 30°C are considered. A hardware-software complex and a JFET automated measurement technique are created. Refined approximations of the temperature dependences of the Spice parameters of JFETs are given, which provide a good agreement between the results of measurements and simulation of the CVC. The created models are intended primarily for computer simulation of low-temperature effects in analog ICs in the LTspice CAD.

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What this paper is about

The results of experimental studies of the current-voltage characteristics (CVC) of silicon n-JFET and p-JFET manufactured at JSC INTEGRAL (Minsk, Belarus) at temperatures from minus 195°C up to 30°C are considered. A hardware-software complex and a JFET automated measurement technique are created. Refined approximations of the temperature dependences of the Spice parameters of JFETs are given, which provide a good agreement between the results of measurements and simulation of the CVC. The created models are intended primarily for computer simulation of low-temperature effects in analog ICs in the LTspice CAD.

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OpenAlex reports 6 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

The results of experimental studies of the current-voltage characteristics (CVC) of silicon n-JFET and p-JFET manufactured at JSC INTEGRAL (Minsk, Belarus) at temperatures from minus 195°C up to 30°C are considered. A hardware-software complex and a JFET automated measurement technique are created. Refined approximations of the temperature dependences of the Spice parameters of JFETs are given, which provide a good agreement between the results of measurements and simulation of the CVC. The created models are intended primarily for computer simulation of low-temperature effects in analog ICs in the LTspice CAD.

Key concepts: JFET, Spice, CAD, Electronic engineering, Electrical engineering, Voltage, Software, Computer science

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