ScholarLens Back to search
1987•IEEE International Reliability Physics Symposium proceedingsRequires access

The Effects of Processing on EEPROM Reliability

David A. Baglee, Taizo SUGAWARA, S. Fukawa, Kazuya Mori, L.M. Bellay, T. Miller

Open publisher page 6 citations

Abstract

EEPROMs have one significant advantage over the more common EPROM. This is in the ease with which data can be changed in just a matter of milliseconds. In this paper we will investigate the effects that the various critical process steps can have on the two key reliability aspects of these memories, namely: Data Retention and Write/Erase endurance. In particular we will examine effects of the tunnel oxidation conditions and protective overcoat type on these parameters.

About this research paper

What this paper is about

EEPROMs have one significant advantage over the more common EPROM. This is in the ease with which data can be changed in just a matter of milliseconds. In this paper we will investigate the effects that the various critical process steps can have on the two key reliability aspects of these memories, namely: Data Retention and Write/Erase endurance. In particular we will examine effects of the tunnel oxidation conditions and protective overcoat type on these parameters.

Why it matters

OpenAlex reports 6 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

EEPROMs have one significant advantage over the more common EPROM. This is in the ease with which data can be changed in just a matter of milliseconds. In this paper we will investigate the effects that the various critical process steps can have on the two key reliability aspects of these memories, namely: Data Retention and Write/Erase endurance. In particular we will examine effects of the tunnel oxidation conditions and protective overcoat type on these parameters.

Key concepts: EPROM, EEPROM, Reliability (semiconductor), Data retention, Computer science, Non-volatile memory, Reliability engineering, Process (computing)

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
The Effects of Processing on EEPROM Reliability — Research Paper | ScholarLens