2013•Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIERequires access
Determining the state of non-volatile memory cells with floating gate using scanning probe microscopy
D. Hanzii, E. Kelm, N. Luapunov, Р. А. Милованов, G. Molodcova, M. Yanul, D. N. Zubov
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Abstract
During a failure analysis of integrated circuits, containing non-volatile memory, it is often necessary to determine its contents while Standard memory reading procedures are not applicable. This article considers how the state of NVM cells with floating gate can be determined using scanning probe microscopy. Samples preparation and measuring procedure are described with the example of Microchip microcontrollers with the EPROM memory (PIC12C508) and flash-EEPROM memory (PIC16F876A).