ScholarLens Back to search
1998•Active and Passive Electronic ComponentsOpen access

A Simplified Spice Model for IGBT

Ahmed Haddi, Alain Maouad, Omar Elmazria, Axel Hoffmann, Jean‐Pierre Charles

Open full text 3 citations

Abstract

A simplified IGBT (Insulated Gate Bipolar Transistor) SPICE macromodel, based on its equivalent circuit, is proposed. This macromodel is provided to simulate various mechanisms governing the behavior of the IGBT, and it takes into account specific phenomena limiting its SOA (Safe Operating Area), such as forward and reverse biased SOA, as well as latch‐up. The validity of this model is confirmed by comparison between simulation and experimental results as well as the data sheets. This comparison is tested for two IGBT devices showing two different powers and switching speeds, and a good agreement is recorded for both IGBT devices.

Open-access reader

About this research paper

What this paper is about

A simplified IGBT (Insulated Gate Bipolar Transistor) SPICE macromodel, based on its equivalent circuit, is proposed. This macromodel is provided to simulate various mechanisms governing the behavior of the IGBT, and it takes into account specific phenomena limiting its SOA (Safe Operating Area), such as forward and reverse biased SOA, as well as latch‐up. The validity of this model is confirmed by comparison between simulation and experimental results as well as the data sheets. This comparison is tested for two IGBT devices showing two different powers and switching speeds, and a good agreement is recorded for both IGBT devices.

Why it matters

OpenAlex reports 3 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

A simplified IGBT (Insulated Gate Bipolar Transistor) SPICE macromodel, based on its equivalent circuit, is proposed. This macromodel is provided to simulate various mechanisms governing the behavior of the IGBT, and it takes into account specific phenomena limiting its SOA (Safe Operating Area), such as forward and reverse biased SOA, as well as latch‐up. The validity of this model is confirmed by comparison between simulation and experimental results as well as the data sheets. This comparison is tested for two IGBT devices showing two different powers and switching speeds, and a good agreement is recorded for both IGBT devices.

Key concepts: Insulated-gate bipolar transistor, Spice, Limiting, Current injection technique, Electronic engineering, Bipolar junction transistor, Safe operating area, Transistor

Related papers

Related paper 1Related paper 2
Back to paper searchBrowse research topicsOriginal source
A Simplified Spice Model for IGBT — Research Paper | ScholarLens