2002•Unpublished venueRequires access

Subcircuit SPICE modeling of a lateral IGBT for high voltage power IC design

Yoshimasa Kawaguchi, Y. Terazaki, A. Nakagawa

Abstract

In this paper, a subcircuit model of lateral IGBTs on SOI substrate for SPICE simulation is presented. The model accurately takes into account the characteristics of lateral IGBTs based on the results of 2-D device simulators. Static and transient analysis of a lateral IGBT was carried out, using this model. The simulation results agreed very well with experimental results. An application of the proposed model to a over current protection circuit design is presented.

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Available abstract

Key concepts: Spice, Insulated-gate bipolar transistor, Transient (computer programming), Electronic engineering, Power (physics), Current injection technique, Silicon on insulator, Voltage