An electro-thermal SPICE model for Reverse Conducting IGBT: Simulation and experimental validation
Michele Riccio, Marianna Tedesco, P. Mirone, Gianluigi De Falco, Luca Maresca, Giovanni Breglio, Andrea Irace
Abstract
Michele Riccio, Marianna Tedesco, P. Mirone, Gianluigi De Falco, Luca Maresca, Giovanni Breglio, Andrea Irace
Abstract
The compact SPICE modeling of Reverse Conducting IGBTs is presented in this paper. The proposed approach is based on a quasi-2D formulation with the joint use of IGBT and PiN diode sub-circuits. Lateral currents paths and turn-on forward delay are considered into the model. Self-heating effect for both IGBT and diode regions is take into account, enabling reliable electro-thermal analysis. The model is calibrated to fit experimental data of a commercial 20 A-1.2 kV rated device. As a compelling example to prove the effectiveness of the model, the results of an electro-thermal simulation on a quasi-resonant converter are compared with experiments.
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The compact SPICE modeling of Reverse Conducting IGBTs is presented in this paper. The proposed approach is based on a quasi-2D formulation with the joint use of IGBT and PiN diode sub-circuits. Lateral currents paths and turn-on forward delay are considered into the model. Self-heating effect for both IGBT and diode regions is take into account, enabling reliable electro-thermal analysis. The model is calibrated to fit experimental data of a commercial 20 A-1.2 kV rated device. As a compelling example to prove the effectiveness of the model, the results of an electro-thermal simulation on a quasi-resonant converter are compared with experiments.
Key concepts: Spice, Insulated-gate bipolar transistor, Diode, Thermal, Electronic engineering, PIN diode, Current injection technique, Electronic circuit