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2017•Unpublished venueRequires access

Mid-IR waveguides in SOI platform

Usman Younis, Xianshu Luo, Bowei Dong, Li Huang, Andy Eu-Jin Lim, Patrick Lo, Andrew A. Bettiol, Kah‐Wee Ang

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Abstract

We present mid-IR waveguides developed in Ge-on-SOI and SOI. The minimum loss achieved for Ge-on-SOI strip waveguides is ~8 dB/cm and for SOI waveguides is ~1.4 dB/cm for TE polarized light at 3.7 μm. These waveguides demonstrate the feasibility of employing Ge-on-SOI for high power integrated sensing and SOI to achieve low-loss interconnects.

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What this paper is about

We present mid-IR waveguides developed in Ge-on-SOI and SOI. The minimum loss achieved for Ge-on-SOI strip waveguides is ~8 dB/cm and for SOI waveguides is ~1.4 dB/cm for TE polarized light at 3.7 μm. These waveguides demonstrate the feasibility of employing Ge-on-SOI for high power integrated sensing and SOI to achieve low-loss interconnects.

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Available abstract

We present mid-IR waveguides developed in Ge-on-SOI and SOI. The minimum loss achieved for Ge-on-SOI strip waveguides is ~8 dB/cm and for SOI waveguides is ~1.4 dB/cm for TE polarized light at 3.7 μm. These waveguides demonstrate the feasibility of employing Ge-on-SOI for high power integrated sensing and SOI to achieve low-loss interconnects.

Key concepts: Silicon on insulator, Materials science, Optoelectronics, Optics, Waveguide, Insertion loss, Silicon, Physics

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