2002•Unpublished venueRequires access

Minimize dishing effects during chemical mechanical planarization of copper damascene structures

Zhang Guohai, Qian He, Xia Yang, Wu Dexin

Abstract

Copper CMP is one of the key steps in the damascene process. Some experiments on of Copper CMP were done based on the homemade CMP machine and the novel FA/O Cu slurry made in China. The mechanism of Copper CMP using the novel slurry was given. The dishing effects during Cu CMP were discussed in detail. Furthermore, the dishing effect was minimized by adjusting the applied pressure.

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Key concepts: Chemical-mechanical planarization, Copper interconnect, Copper, Slurry, Materials science, Metallurgy, Composite material, Polishing