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Dielectric Planarization using Mn2O3 Slurry

Sadahiro Kishii, Ko Nakamura, Y. Arimoto, 貞浩 岸井, 亘 中村, 由弘 有本

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Abstract

We have developed an Mn2O3 slurry for dielectric planarization for the first time. Our Mn2O3 slurry has 4 times the removal rate of conventional slurry. The removal rate for this slurry remains constant for between l wt% and 10 wt% solid concentration. Pad-conditioning-free polish was successfully realized. We demonstrated that this slurry is reproducible.

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What this paper is about

We have developed an Mn2O3 slurry for dielectric planarization for the first time. Our Mn2O3 slurry has 4 times the removal rate of conventional slurry. The removal rate for this slurry remains constant for between l wt% and 10 wt% solid concentration. Pad-conditioning-free polish was successfully realized. We demonstrated that this slurry is reproducible.

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Available abstract

We have developed an Mn2O3 slurry for dielectric planarization for the first time. Our Mn2O3 slurry has 4 times the removal rate of conventional slurry. The removal rate for this slurry remains constant for between l wt% and 10 wt% solid concentration. Pad-conditioning-free polish was successfully realized. We demonstrated that this slurry is reproducible.

Key concepts: Chemical-mechanical planarization, Slurry, Dielectric, Materials science, Composite material, Metallurgy, Mineralogy, Polishing

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