Noise modeling in MESFET and HEMT mixers using a uniform noisy line model
F. Danneville, G. Dambrine, A. Cappy
Abstract
F. Danneville, G. Dambrine, A. Cappy
Abstract
The aim of this paper is to present a noise model which predicts the noise performance of MESFET and HEMT mixers. The conversion and noise correlation matrices of a FET mixer are calculated using a uniform nonlinear noisy active line concept to describe the FET. This calculation is based on a perturbation analysis of the large-signal noiseless steady state, making it a "microscopic nonlinear noise model". This method is applied to the case of a hot HEMT gate mixer and we show that the theoretical results are in agreement with experimental data.
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The aim of this paper is to present a noise model which predicts the noise performance of MESFET and HEMT mixers. The conversion and noise correlation matrices of a FET mixer are calculated using a uniform nonlinear noisy active line concept to describe the FET. This calculation is based on a perturbation analysis of the large-signal noiseless steady state, making it a "microscopic nonlinear noise model". This method is applied to the case of a hot HEMT gate mixer and we show that the theoretical results are in agreement with experimental data.
Key concepts: MESFET, High-electron-mobility transistor, Noise temperature, Nonlinear system, Noise (video), Electronic engineering, Noise figure, Transistor