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1998•IEEE Transactions on Electron DevicesRequires access

A quasi-two-dimensional HEMT model for DC and microwave simulation

R. Singh, C.M. Snowden

Open publisher page 27 citations

Abstract

A comprehensive quasi-two-dimensional (Q-2-D) physical HEMT simulator is described for microwave CAD applications. It is used to accurately predict the DC and small-signal microwave performance of HEMT's. This simulator, which accounts for hot-electron effects in submicron HEMT's, includes parasitic MESFET conduction, quantum effects, and substrate injection phenomena. The accuracy of the present simulator is demonstrated by comparison with measured data for microwave HEMT's.

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What this paper is about

A comprehensive quasi-two-dimensional (Q-2-D) physical HEMT simulator is described for microwave CAD applications. It is used to accurately predict the DC and small-signal microwave performance of HEMT's. This simulator, which accounts for hot-electron effects in submicron HEMT's, includes parasitic MESFET conduction, quantum effects, and substrate injection phenomena. The accuracy of the present simulator is demonstrated by comparison with measured data for microwave HEMT's.

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OpenAlex reports 27 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

A comprehensive quasi-two-dimensional (Q-2-D) physical HEMT simulator is described for microwave CAD applications. It is used to accurately predict the DC and small-signal microwave performance of HEMT's. This simulator, which accounts for hot-electron effects in submicron HEMT's, includes parasitic MESFET conduction, quantum effects, and substrate injection phenomena. The accuracy of the present simulator is demonstrated by comparison with measured data for microwave HEMT's.

Key concepts: MESFET, High-electron-mobility transistor, Microwave, Optoelectronics, Monolithic microwave integrated circuit, Substrate (aquarium), Electronic engineering, Computer science

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