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1994•IEEE Transactions on Electron DevicesRequires access

Comparative behavior and performances of MESFET and HEMT as a function of temperature

Y. Gobert, G. Salmer

Open publisher page 21 citations

Abstract

We present an experimental study of MESFET and conventional HEMT behavior as a function of temperature and limited to the range from 293 K to 393 K. We review the main phenomena appearing under high temperature conditions, and their effects on FET performances. The most important degradations concern, except the mobility in HEMT, the noise figure that can increase drastically between 293 K and 393 K. However, we present structures which seem to be less sensitive to temperature variations.>

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What this paper is about

We present an experimental study of MESFET and conventional HEMT behavior as a function of temperature and limited to the range from 293 K to 393 K. We review the main phenomena appearing under high temperature conditions, and their effects on FET performances. The most important degradations concern, except the mobility in HEMT, the noise figure that can increase drastically between 293 K and 393 K. However, we present structures which seem to be less sensitive to temperature variations.>

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OpenAlex reports 21 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

We present an experimental study of MESFET and conventional HEMT behavior as a function of temperature and limited to the range from 293 K to 393 K. We review the main phenomena appearing under high temperature conditions, and their effects on FET performances. The most important degradations concern, except the mobility in HEMT, the noise figure that can increase drastically between 293 K and 393 K. However, we present structures which seem to be less sensitive to temperature variations.>

Key concepts: MESFET, High-electron-mobility transistor, Noise (video), Function (biology), Atmospheric temperature range, Optoelectronics, Materials science, Electronic engineering

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