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GaAs MESFET fabrication using (NH 4 ) 2 S x solutionsulphur diffusion technique

Jong‐Lam Lee, Kyoung Jin Choi

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Abstract

A newly developed sulphur diffusion method for fabricating GaAs FETs is demonstrated. Sulphur atoms adsorbed at the surface of GaAs by the (NH4)2Sx treatment were diffused into GaAs during rapid thermal annealing. Transconductance as high as 190 mS/mm was obtained for MESFETs with 1.0 µm gate length, fabricated on the layers diffused by this technique. This diffusion technique was found to be suitable for GaAs device fabrication.

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What this paper is about

A newly developed sulphur diffusion method for fabricating GaAs FETs is demonstrated. Sulphur atoms adsorbed at the surface of GaAs by the (NH4)2Sx treatment were diffused into GaAs during rapid thermal annealing. Transconductance as high as 190 mS/mm was obtained for MESFETs with 1.0 µm gate length, fabricated on the layers diffused by this technique. This diffusion technique was found to be suitable for GaAs device fabrication.

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Available abstract

A newly developed sulphur diffusion method for fabricating GaAs FETs is demonstrated. Sulphur atoms adsorbed at the surface of GaAs by the (NH4)2Sx treatment were diffused into GaAs during rapid thermal annealing. Transconductance as high as 190 mS/mm was obtained for MESFETs with 1.0 µm gate length, fabricated on the layers diffused by this technique. This diffusion technique was found to be suitable for GaAs device fabrication.

Key concepts: MESFET, Fabrication, Annealing (glass), Gallium arsenide, Materials science, Transconductance, Diffusion, Optoelectronics

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