1983•IEEE Electron Device LettersRequires access

Transconductance compression in submicrometer GaAs MESFET's

C.-L. Chen, K.D. Wise

Abstract

The transconductance compression phenomenon in GaAs MESFET's is known to depend on the gate metal, processing, and the gate length. This phenomenon is thought to be caused by the depletion region under the free surface between gate and drain. Based on this assumption, a new model is proposed which is able to explain the experimental results for 0.25-µm gate-length devices satisfactorily.

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Key concepts: MESFET, Transconductance, Gallium arsenide, Optoelectronics, Materials science, Compression (physics), Logic gate, Electronic engineering