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A new data retention mechanism after endurance stress on flash memory

Hirokazu KAMEYAMA, Yutaka Okuyama, Shiro Kamohara, Kazuyuki Kubota, Haruki Kume, Kikuo Okuyama, Y. Manabe, A. Nozoe, Hideaki Uchida, Masataka Hidaka, Katsuhiro Ogura

Open publisher page 40 citations

Abstract

We propose a new data retention model after endurance stress that may be explained as a combination of two retention mechanisms. One inherent retention characteristic is ruled by thermionic emission and is dominant above 150 C. The other retention mechanism is dominant below 85 to 125 C and is controlled by anomalous SILC. We have clarified that the data retention properties after P/E cycling were well fitted by the hopping conduction model. In particular, the presence of traps generated by excessive P/E cycling played a significant role in the temperature dependence of the retention lifetime.

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What this paper is about

We propose a new data retention model after endurance stress that may be explained as a combination of two retention mechanisms. One inherent retention characteristic is ruled by thermionic emission and is dominant above 150 C. The other retention mechanism is dominant below 85 to 125 C and is controlled by anomalous SILC. We have clarified that the data retention properties after P/E cycling were well fitted by the hopping conduction model. In particular, the presence of traps generated by excessive P/E cycling played a significant role in the temperature dependence of the retention lifetime.

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OpenAlex reports 40 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

We propose a new data retention model after endurance stress that may be explained as a combination of two retention mechanisms. One inherent retention characteristic is ruled by thermionic emission and is dominant above 150 C. The other retention mechanism is dominant below 85 to 125 C and is controlled by anomalous SILC. We have clarified that the data retention properties after P/E cycling were well fitted by the hopping conduction model. In particular, the presence of traps generated by excessive P/E cycling played a significant role in the temperature dependence of the retention lifetime.

Key concepts: Data retention, Retention time, Memory retention, Thermionic emission, Stress (linguistics), SILC, Cycling, Degradation (telecommunications)

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