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Impact of program/erase stress induced hole current on data retention degradation for MONOS memories

Shosuke Fujii, Ryota Fujitsuka, Katsuyuki Sekine, Haruka Kusai, Kiwamu Sakuma, Masato Koyama

Open publisher page 2 citations

Abstract

We investigate the mechanism for the data retention degradation caused by program/erase (P/E) cycling in MONOS memories, using the carrier separation measurement to identify the carrier type of Stress-Induced Leakage Current (SILC). It is thereby found that SILC is composed mainly of holes for the MONOS with less Si-rich SiN layer (hole SILC). A clear correlation is also discovered between hole SILC and interface states generated during P/E cycle. We also discuss the mechanism of the degradation by hole SILC of the data retention characteristics of MONOS devices.

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What this paper is about

We investigate the mechanism for the data retention degradation caused by program/erase (P/E) cycling in MONOS memories, using the carrier separation measurement to identify the carrier type of Stress-Induced Leakage Current (SILC). It is thereby found that SILC is composed mainly of holes for the MONOS with less Si-rich SiN layer (hole SILC). A clear correlation is also discovered between hole SILC and interface states generated during P/E cycle. We also discuss the mechanism of the degradation by hole SILC of the data retention characteristics of MONOS devices.

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Available abstract

We investigate the mechanism for the data retention degradation caused by program/erase (P/E) cycling in MONOS memories, using the carrier separation measurement to identify the carrier type of Stress-Induced Leakage Current (SILC). It is thereby found that SILC is composed mainly of holes for the MONOS with less Si-rich SiN layer (hole SILC). A clear correlation is also discovered between hole SILC and interface states generated during P/E cycle. We also discuss the mechanism of the degradation by hole SILC of the data retention characteristics of MONOS devices.

Key concepts: SILC, Data retention, Degradation (telecommunications), Optoelectronics, Materials science, Stress (linguistics), MOSFET, Electrical engineering

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