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2003•Unpublished venueRequires access

DIBL coefficient in short-channel NMOS transistors

H. El Ghitani

Open publisher page 19 citations

Abstract

A study of the drain induced barrier lowering (DIBL) effect in short-channel NMOS transistors is presented. The study is based on the two dimensional analytical solution of Poisson equation in the depletion region under the gate. A closed form analytical expression for the DIBL coefficient is derived and its temperature dependence is investigated. The numerical results obtained are in close agreement with the experimental data. The derived expression could be efficiently used in circuit simulation programs.

About this research paper

What this paper is about

A study of the drain induced barrier lowering (DIBL) effect in short-channel NMOS transistors is presented. The study is based on the two dimensional analytical solution of Poisson equation in the depletion region under the gate. A closed form analytical expression for the DIBL coefficient is derived and its temperature dependence is investigated. The numerical results obtained are in close agreement with the experimental data. The derived expression could be efficiently used in circuit simulation programs.

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OpenAlex reports 19 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

A study of the drain induced barrier lowering (DIBL) effect in short-channel NMOS transistors is presented. The study is based on the two dimensional analytical solution of Poisson equation in the depletion region under the gate. A closed form analytical expression for the DIBL coefficient is derived and its temperature dependence is investigated. The numerical results obtained are in close agreement with the experimental data. The derived expression could be efficiently used in circuit simulation programs.

Key concepts: NMOS logic, Transistor, Drain-induced barrier lowering, Channel (broadcasting), Materials science, Poisson's equation, Optoelectronics, Channel length modulation

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