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Short-channel threshold model for buried-channel MOSFET's

J.S.T. Huang, J.W. Schrankler, J.S. Kueng

Open publisher page 15 citations

Abstract

An analytical closed-form expression for the short-channel threshold voltage of a normally-OFF-type buried-channel MOSFET (BC-MOSFET) was derived. The model is based on the increase in majority-carrier concentration along the channel and the substrate charge sharing property between source-drain and the channel. This model is able to predict the condition under which the magnitude of the threshold voltage can initially increase and then falls off precipitously as the channel length gradually decreases. Good agreement between theory and experiment was obtained with the p-channel BC-MOSFET used in the CMOS circuit.

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What this paper is about

An analytical closed-form expression for the short-channel threshold voltage of a normally-OFF-type buried-channel MOSFET (BC-MOSFET) was derived. The model is based on the increase in majority-carrier concentration along the channel and the substrate charge sharing property between source-drain and the channel. This model is able to predict the condition under which the magnitude of the threshold voltage can initially increase and then falls off precipitously as the channel length gradually decreases. Good agreement between theory and experiment was obtained with the p-channel BC-MOSFET used in the CMOS circuit.

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OpenAlex reports 15 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

An analytical closed-form expression for the short-channel threshold voltage of a normally-OFF-type buried-channel MOSFET (BC-MOSFET) was derived. The model is based on the increase in majority-carrier concentration along the channel and the substrate charge sharing property between source-drain and the channel. This model is able to predict the condition under which the magnitude of the threshold voltage can initially increase and then falls off precipitously as the channel length gradually decreases. Good agreement between theory and experiment was obtained with the p-channel BC-MOSFET used in the CMOS circuit.

Key concepts: MOSFET, Channel length modulation, Threshold voltage, Channel (broadcasting), Short-channel effect, Reverse short-channel effect, Charge sharing, Materials science

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