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Analysis of Nonuniformly Doped SOI MOSFETs

P. Paelinck, O. Vancauwenberghe, F. Van de Wiele

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Abstract

A one-dimensional device simulator is developed for nonuniformly doped SOI MOSFETs which allows one to calculate accurately and reliably their electrical characteristics in the linear region. NMOS and PMOS transistors have been successfully optimized in relation to the process implantation parameters. Comparison with experimental results is presented.

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What this paper is about

A one-dimensional device simulator is developed for nonuniformly doped SOI MOSFETs which allows one to calculate accurately and reliably their electrical characteristics in the linear region. NMOS and PMOS transistors have been successfully optimized in relation to the process implantation parameters. Comparison with experimental results is presented.

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Available abstract

A one-dimensional device simulator is developed for nonuniformly doped SOI MOSFETs which allows one to calculate accurately and reliably their electrical characteristics in the linear region. NMOS and PMOS transistors have been successfully optimized in relation to the process implantation parameters. Comparison with experimental results is presented.

Key concepts: NMOS logic, PMOS logic, MOSFET, Silicon on insulator, Materials science, Doping, Transistor, Optoelectronics

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