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2013•ECS Journal of Solid State Science and TechnologyOpen access

Chemical and Mechanical Properties of Cu Surface Reaction Layers in Cu-CMP to Improve Planarization

Tsuyoshi Kanki, Takahiro Kimura, T. Nakamura

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Abstract

Chemical and mechanical properties of a surface reaction layer are essential to improve planarization in Cu-CMP. We compared the reaction layers on Cu surfaces formed by dipping in APS and H 2 O 2 slurries and show that a thinner, mechanically stronger, and corrosion-resistant layer is preferable. It enables preferential polishing of the convex surfaces and consequently relaxes dishing after Cu-CMP. Controlling Cu oxidation reaction to form Cu 2 O in the slurry is essential for achieving further improvements of the planarization.

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Chemical and mechanical properties of a surface reaction layer are essential to improve planarization in Cu-CMP. We compared the reaction layers on Cu surfaces formed by dipping in APS and H 2 O 2 slurries and show that a thinner, mechanically stronger, and corrosion-resistant layer is preferable. It enables preferential polishing of the convex surfaces and consequently relaxes dishing after Cu-CMP. Controlling Cu oxidation reaction to form Cu 2 O in the slurry is essential for achieving further improvements of the planarization.

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Available abstract

Chemical and mechanical properties of a surface reaction layer are essential to improve planarization in Cu-CMP. We compared the reaction layers on Cu surfaces formed by dipping in APS and H 2 O 2 slurries and show that a thinner, mechanically stronger, and corrosion-resistant layer is preferable. It enables preferential polishing of the convex surfaces and consequently relaxes dishing after Cu-CMP. Controlling Cu oxidation reaction to form Cu 2 O in the slurry is essential for achieving further improvements of the planarization.

Key concepts: Chemical-mechanical planarization, Materials science, Slurry, Layer (electronics), Polishing, Corrosion, Chemical reaction, Nanometre

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