1993•Defense Technical Information Center (DTIC)Requires access
Pseudomorphic Stabilization of Diamond on Non-Diamond Substrates: Heteroepitaxially Grown Diamond on a c-BN(111) Surface.
L. Wang, Alberto Argoitia, J. S., John C. Angus, P. Pirouz
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Abstract
A continuous diamond film with a thickness of about 10 microns was grown on (111) faces of single crystal cubic boron nitride (c-BN) by hot- Filament chemical vapor deposition (CVD). The morphology and microstructure of the diamond film were investigated by scanning and transmission electron microscopy. Cross-sectional selected area diffraction pattern (SADP) and high resolution electron microscopy (HREM) of the diamond/c-BN interface show that the diamond has a parallel orientation relationship with respect to the substrate. Indirect evidence from scanning electron microscopy indicates that parallel epitaxy was achieved over the entire boron terminated face of the c-BN crystal, which had linear dimensions of approximately 400 microns....Diamond, Cubic Boron Nitride, Heteroepitaxy Chemical Vapor Deposition.