Epitaxial growth of diamond films on the {221} and {100} surfaces of c-BN with microstructures full of (100) facets

Diamond films on surfaces of cubic boron nitride substrate grown by microwave plasma chemical vapor deposition are investigated. Deposited films are characterized by scanning electron microscopy, reflection high-energy electron diffraction, and micro-Raman spectroscopy. We found a new stacking growth mode of the epitaxial diamond films which is distinguished from the previous observed modes. The morphologies of diamond (100) facets formed on the {221} and {100} surfaces of cubic boron nitride are steps and/or stages, respectively. This is beneficial to growing a fair perfect single-crystal films of diamond.