1993•Applied Physics LettersRequires access
Heteroepitaxially grown diamond on a c-BN {111} surface
Long Wang, Pirouz Pirouz, Alberto Argoitia, Jing Sheng, John C. Angus
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Abstract
A continuous diamond film with a thickness of about 10 μm was grown on {111} faces of a single-crystal cubic boron nitride (c-BN) by hot-filament chemical vapor deposition (CVD). Cross-sectional selected area diffraction pattern (SADP) and high resolution electron microscopy (HREM) of the diamond/c-BN interface show that the diamond has a parallel orientation relationship with respect to the substrate.