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2002•Unpublished venueRequires access

The MTO thyristor-a new high power bipolar MOS thyristor

D.E. Piccone, Rik W. De Doncker, J. Barrow, W.H. Tobin

Open publisher page 34 citations

Abstract

A new high power bipolar MOS thyristor, the MTO/sup TM/ thyristor, is a latching device which extends the limited capabilities of the MCT and IGBT to higher power and blocking voltage. The MTO thyristor plan fits well, beginning at a blocking voltage level where the other bipolar MOS devices are believed to have a ceiling of diminishing returns, that is above 3000 V. The MTO thyristor is easily accommodated to the conventional disk-type package for double sided cooling and permits design voltage opportunity to that achieved for thyristors, e.g., 9000 V. Feasibility of concept has been established and development for specific designs is well underway.

About this research paper

What this paper is about

A new high power bipolar MOS thyristor, the MTO/sup TM/ thyristor, is a latching device which extends the limited capabilities of the MCT and IGBT to higher power and blocking voltage. The MTO thyristor plan fits well, beginning at a blocking voltage level where the other bipolar MOS devices are believed to have a ceiling of diminishing returns, that is above 3000 V. The MTO thyristor is easily accommodated to the conventional disk-type package for double sided cooling and permits design voltage opportunity to that achieved for thyristors, e.g., 9000 V. Feasibility of concept has been established and development for specific designs is well underway.

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OpenAlex reports 34 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

A new high power bipolar MOS thyristor, the MTO/sup TM/ thyristor, is a latching device which extends the limited capabilities of the MCT and IGBT to higher power and blocking voltage. The MTO thyristor plan fits well, beginning at a blocking voltage level where the other bipolar MOS devices are believed to have a ceiling of diminishing returns, that is above 3000 V. The MTO thyristor is easily accommodated to the conventional disk-type package for double sided cooling and permits design voltage opportunity to that achieved for thyristors, e.g., 9000 V. Feasibility of concept has been established and development for specific designs is well underway.

Key concepts: Thyristor, Integrated gate-commutated thyristor, MOS-controlled thyristor, Static induction thyristor, Electrical engineering, Gate turn-off thyristor, Insulated-gate bipolar transistor, Blocking (statistics)

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