1977•Unpublished venueRequires access

High speed high voltage static induction thyristor

Y. Kajiwara, Y. Watakabe, M. Bessho, Yoshinori Yukimoto, K. Shirahata

Abstract

We have developed a new thyristor called Static Induction Thyristor (SI Thyristor) which showed a short fall time of current (0.1 µsec) and a high forward blocking voltage (700 V). The SI thyristor has a combined structure of an N channel Static Induction Transistor and a PNP transistor. It has both capabilities of gate turn-on and gate turn-off according to the value of gate biasing voltage. We have investigated the turn-off mechanism for the high voltage device and have clarified the relation between the device parameters and carrier decaying time responsible for current fall time. From these investigation, we have improved the switching characteristics of high voltage device.

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Available abstract

Key concepts: Thyristor, Static induction thyristor, MOS-controlled thyristor, Gate turn-off thyristor, Integrated gate-commutated thyristor, Static induction transistor, Thyristor drive, Electrical engineering