2002Unpublished venueRequires access

RECEST: a reverse channel emitter switched thyristor

Anup Bhalla, T. Paul Chow, K.C. So

Open publisher page 5 citations

Abstract

A 550 V, reverse channel emitter switched thyristor (RECEST) is demonstrated. It offers ease of thyristor turn-on, a low on-state drop, excellent parasitic thyristor latch-up immunity and a high maximum controllable current density. It is shown to have characteristics superior to both the conventional emitter switched thyristor and the dual lateral channel emitter switched thyristor, and shows promise for use in high-voltage applications.

About this research paper

What this paper is about

A 550 V, reverse channel emitter switched thyristor (RECEST) is demonstrated. It offers ease of thyristor turn-on, a low on-state drop, excellent parasitic thyristor latch-up immunity and a high maximum controllable current density. It is shown to have characteristics superior to both the conventional emitter switched thyristor and the dual lateral channel emitter switched thyristor, and shows promise for use in high-voltage applications.

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OpenAlex reports 5 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

A 550 V, reverse channel emitter switched thyristor (RECEST) is demonstrated. It offers ease of thyristor turn-on, a low on-state drop, excellent parasitic thyristor latch-up immunity and a high maximum controllable current density. It is shown to have characteristics superior to both the conventional emitter switched thyristor and the dual lateral channel emitter switched thyristor, and shows promise for use in high-voltage applications.

Key concepts: Thyristor, MOS-controlled thyristor, Integrated gate-commutated thyristor, Gate turn-off thyristor, Static induction thyristor, Common emitter, TRIAC, Thyristor drive

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