RECEST: a reverse channel emitter switched thyristor
Anup Bhalla, T. Paul Chow, K.C. So
Abstract
Anup Bhalla, T. Paul Chow, K.C. So
Abstract
A 550 V, reverse channel emitter switched thyristor (RECEST) is demonstrated. It offers ease of thyristor turn-on, a low on-state drop, excellent parasitic thyristor latch-up immunity and a high maximum controllable current density. It is shown to have characteristics superior to both the conventional emitter switched thyristor and the dual lateral channel emitter switched thyristor, and shows promise for use in high-voltage applications.
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A 550 V, reverse channel emitter switched thyristor (RECEST) is demonstrated. It offers ease of thyristor turn-on, a low on-state drop, excellent parasitic thyristor latch-up immunity and a high maximum controllable current density. It is shown to have characteristics superior to both the conventional emitter switched thyristor and the dual lateral channel emitter switched thyristor, and shows promise for use in high-voltage applications.
Key concepts: Thyristor, MOS-controlled thyristor, Integrated gate-commutated thyristor, Gate turn-off thyristor, Static induction thyristor, Common emitter, TRIAC, Thyristor drive