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2003•Unpublished venueRequires access

Gallium nitride (GaN) HEMT's: progress and potential for commercial applications

J. R. Shealy, J. Smart, Matthew Poulton, R.A. Sadler, D.E. Grider, Shawn R. Gibb, Brook Hosse, Bruna Ramos de Sousa, D. Halchin, V. Steel, P. Garber, Patrick Wilkerson, B. Zaroff, J. R. Dick, T. Mercier, J. Bonaker, M. Hamilton, Christopher Greer, M. Isenhour

Open publisher page 39 citations

Abstract

This paper focuses on the development of 100 mm gallium nitride HEMT technology at RF Micro Devices and the utilization of GaN transistors for commercial applications such as power amplifiers, power switches and low-noise power oscillators.

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What this paper is about

This paper focuses on the development of 100 mm gallium nitride HEMT technology at RF Micro Devices and the utilization of GaN transistors for commercial applications such as power amplifiers, power switches and low-noise power oscillators.

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OpenAlex reports 39 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

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Available abstract

This paper focuses on the development of 100 mm gallium nitride HEMT technology at RF Micro Devices and the utilization of GaN transistors for commercial applications such as power amplifiers, power switches and low-noise power oscillators.

Key concepts: Gallium nitride, High-electron-mobility transistor, Wide-bandgap semiconductor, Materials science, Optoelectronics, Nitride, Gallium, Gallium arsenide

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