2007•Unpublished venueRequires access

Acousto-Ferroelectric RAM -New Type of Nonvolatile Memory Device

Jean-Philippe Krieger

Abstract

A new paradigm for the operation principle of a ferroelectric random access memory (FeRAM) is presented. The new type of FeRAM is based on piezo-acoustic phenomena in ferroelectric films. It is called acousto-ferroelectric RAM (AFeRAM) because its operation is based on the acoustic method for detecting intrinsic remanent polarization of a ferroelectric memory cell. It has been shown that the novel memory cell concept is highly scalable, so that the structural effective memory cell size can be scaled down to IF2. The advantages of the AFeRAM element are outlined in the text.

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Key concepts: Ferroelectric RAM, Ferroelectricity, Non-volatile memory, Memory cell, Random access memory, Scalability, Materials science, Ferroelectric capacitor