2013•Applied Mechanics and MaterialsOpen access

Design and Thermal Analysis of SiGe HBT with Segmented Emitter Fingers and Non-Uniform Emitter Finger Spacing

Liang Chen, Cheng Zhong Hu, Chun Ling Jiang

Abstract

A novel multi-finger power SiGe heterojunction bipolar transistor (HBT) with segmented emitter fingers and non-uniform emitter finger spacing was proposed to improve the thermal stability. Thermal simulation for a five-finger power SiGe HBT with novel structure was conducted with ANSYS software. Three-dimensional temperature distribution on emitter fingers was obtained. Compared with traditional emitter structure, the maximum junction temperature of novel structure reduce significantly from 429.025K to 414.252K, the thermal resistance reduce from 159K/W to 141K/W, temperature distribution were significantly improved. Thermal stability was effective enhanced.

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Available abstract

Key concepts: Common emitter, Heterojunction bipolar transistor, Materials science, Optoelectronics, Heterojunction, Heterostructure-emitter bipolar transistor, Thermal resistance, Junction temperature