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2003•Applied Physics LettersRequires access

Light-emitting transistor: Light emission from InGaP/GaAs heterojunction bipolar transistors

Ming Feng, N. Holonyak, W. Hafez

Open publisher page 130 citations

Abstract

This letter reports the direct observation of the radiative recombination in the graded base layer of InGaP/GaAs heterojunction bipolar transistors (HBTs). For a 1 μm×16 μm emitter HBT, we demonstrate the change of the spontaneous light emission intensity (ΔIout) as the base current (Δib) of the HBT is varied from 0 to 5 mA, i.e., an HBT operating as a light-emitting transistor. We also demonstrate output light modulation from the base layer at 1 MHz with the base current modulated at 1 MHz in normal transistor mode operation of the HBT.

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What this paper is about

This letter reports the direct observation of the radiative recombination in the graded base layer of InGaP/GaAs heterojunction bipolar transistors (HBTs). For a 1 μm×16 μm emitter HBT, we demonstrate the change of the spontaneous light emission intensity (ΔIout) as the base current (Δib) of the HBT is varied from 0 to 5 mA, i.e., an HBT operating as a light-emitting transistor. We also demonstrate output light modulation from the base layer at 1 MHz with the base current modulated at 1 MHz in normal transistor mode operation of the HBT.

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OpenAlex reports 130 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

This letter reports the direct observation of the radiative recombination in the graded base layer of InGaP/GaAs heterojunction bipolar transistors (HBTs). For a 1 μm×16 μm emitter HBT, we demonstrate the change of the spontaneous light emission intensity (ΔIout) as the base current (Δib) of the HBT is varied from 0 to 5 mA, i.e., an HBT operating as a light-emitting transistor. We also demonstrate output light modulation from the base layer at 1 MHz with the base current modulated at 1 MHz in normal transistor mode operation of the HBT.

Key concepts: Heterojunction bipolar transistor, Bipolar junction transistor, Optoelectronics, Heterostructure-emitter bipolar transistor, Materials science, Common emitter, Heterojunction, Transistor

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