2004•Unpublished venueRequires access
A fast and practical approach to the determination of junction temperature and thermal resistence for BJT/HBT devices
Bo Chen, Ooi Ban Leong, Pang Shyan Kooi
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Abstract
A simple, robust but accurate method to extract the thermal resistance of BJT/HBT devices is proposed. It only needs the measured device DC I-V BJT/HBT devices, GaAs HBT, silicon BJT and SiGe HBTs. Compared to the measured results taken from both CW DC measurements and isothermal measurements, the extracted values using our method is in excellent agreement with the conventional method