Fast transient behavior of thyristor switches
Jerry L. Hudgins, W.M. Portnoy
Abstract
Jerry L. Hudgins, W.M. Portnoy
Abstract
The fast pulse switching behavior of center-fired and interdigitated thyristors was studied by switching 10 µs, 1000 A (at 800 V) pulses. Single-shot switching was performed up to 5000 A/µs, and repetitive switching, at 500 Hz and 2000 A/µs for ten hours. No damage to the devices resulted from the switching stresses.
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The fast pulse switching behavior of center-fired and interdigitated thyristors was studied by switching 10 µs, 1000 A (at 800 V) pulses. Single-shot switching was performed up to 5000 A/µs, and repetitive switching, at 500 Hz and 2000 A/µs for ten hours. No damage to the devices resulted from the switching stresses.
Key concepts: Thyristor, Fast switching, Transient (computer programming), Switching time, MOS-controlled thyristor, Materials science, Electrical engineering, Pulse (music)