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A new lateral insulated base emitter switched thyristor

E.M. Sankara Narayanan, Z. Qin, M.M. De Souza, Gaj Amaratunga

Open publisher page 4 citations

Abstract

In this paper, a new, CMOS compatible, lateral insulated base emitter switched thyristor structure is demonstrated. Unlike other EST structures reported earlier, in the LIBEST, the MOS controlled thyristor (EST) and MOS controlled bipolar transistor (LIGBT) components are connected in parallel. Thus, the trade-off between the turn-on voltage and the switching current capability is overcome. A main feature of the LIBEST is that the thyristor turn-on voltage is independent of the length of the floating emitter. In addition, the forward drop of the LIBEST is significantly lower than other LEST structures reported in the literature.

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What this paper is about

In this paper, a new, CMOS compatible, lateral insulated base emitter switched thyristor structure is demonstrated. Unlike other EST structures reported earlier, in the LIBEST, the MOS controlled thyristor (EST) and MOS controlled bipolar transistor (LIGBT) components are connected in parallel. Thus, the trade-off between the turn-on voltage and the switching current capability is overcome. A main feature of the LIBEST is that the thyristor turn-on voltage is independent of the length of the floating emitter. In addition, the forward drop of the LIBEST is significantly lower than other LEST structures reported in the literature.

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OpenAlex reports 4 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

In this paper, a new, CMOS compatible, lateral insulated base emitter switched thyristor structure is demonstrated. Unlike other EST structures reported earlier, in the LIBEST, the MOS controlled thyristor (EST) and MOS controlled bipolar transistor (LIGBT) components are connected in parallel. Thus, the trade-off between the turn-on voltage and the switching current capability is overcome. A main feature of the LIBEST is that the thyristor turn-on voltage is independent of the length of the floating emitter. In addition, the forward drop of the LIBEST is significantly lower than other LEST structures reported in the literature.

Key concepts: Thyristor, MOS-controlled thyristor, Integrated gate-commutated thyristor, Gate turn-off thyristor, Static induction thyristor, Common emitter, Electrical engineering, Bipolar junction transistor

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