2002•Unpublished venueRequires access

The p-MOS controlled lateral thyristor: A MOS controllable thyristor suitable for integration

W. Chen, Gehan A. J. Amaratunga

Abstract

A novel CMOS compatible lateral thyristor is proposed in this paper. Its thyristor conduction is fully controlled by a p-MOS gate. Loss of MOS control due to parasitic latch-up has been eliminated and triggering of the main thyristor at lower forward current achieved. The device operation has been verified by 2D numerical simulations and experimental fabrication.

About this research paper

What this paper is about

Why it matters

A significance statement is not available in the OpenAlex record.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

Key concepts: Thyristor, MOS-controlled thyristor, Integrated gate-commutated thyristor, Static induction thyristor, Gate turn-off thyristor, CMOS, Materials science, Fabrication