2007•Journal of Electronic MaterialsRequires access

Comparison of GaN and In0.04Ga0.96N p-Layers on the Electrical and Electroluminescence Properties of Green Light Emitting Diodes

J. Limb, Woonghee Lee, Jae‐Hyun Ryou, Dongwon Yoo, Russell D. Dupuis

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Key concepts: Light-emitting diode, Electroluminescence, Optoelectronics, Materials science, Diode, Equivalent series resistance, Voltage, Layer (electronics)

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Comparison of GaN and In0.04Ga0.96N p-Layers on the Electrical and Electroluminescence Properties of Green Light Emitting Diodes — Research Paper | ScholarLens