Temperature dependence of the inhomogeneous parameters of the Mo/4H–SiC Schottky barrier diodes

Abstract The inhomogeneous parameters of Mo/4H–SiC Schottky barrier diodes were determined from current–voltage ( I – V ) characteristics in the temperature range of 303–498 K by using a general approach for the real Schottky diode. In this approach the total series resistances is divided into two resistances; the first one ( R P ) is the sum of the series resistances ( r ) of the particular diodes connected in parallel and the second is the common resistance ( R C ) to all particular diodes. The mean barrier height ( ϕ ¯ ) and the standard deviation ( σ ) decrease linearly with decreasing temperature and they are between the values for the diodes with the two limiting cases; no current spreading and full current spreading. The series resistance R C increases, while the series resistance R P slightly decreases with decreasing temperature.