2014•Unpublished venueRequires access
An experimental analysis on how the dead-time of SiC BJT and SiC MOSFET impacts the losses in a high-frequency resonant converter
Georg Tolstoy, Per Ranstad, Juan Colmenares, Dimosthenis Peftitsis, Florian Giezendanner, Jacek Rąbkowski, Hans‐Peter Nee
Open publisher page 12 citations
Abstract
Active control of the dead-time in a SLR converter is in this paper shown to be of great importance. The efficiency of the full-bridge will increase if the dead-time control is made in the right way. Different control algorithms are shown to work well for different power switches. For the SiC MOSFET and the SiC BJT the control algorithms are tested experimentally.