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Properties of high-power Cryo-MOSFETs

Otward M. Mueller

Open publisher page 22 citations

Abstract

At cryogenic temperatures MOS field-effect high-voltage power transistors behave as super-semiconductor switches (Cryo-MOSFET). Important parameters such as on-resistance, breakdown voltage, thermal resistance, SOA, etc., of 500-1000 V power Cryo-MOSFETs operated in liquid nitrogen (LN2, T=77 K) at drain currents in the 10-100 A range have been measured. The results are reported. FREDFETs are also discussed.

About this research paper

What this paper is about

At cryogenic temperatures MOS field-effect high-voltage power transistors behave as super-semiconductor switches (Cryo-MOSFET). Important parameters such as on-resistance, breakdown voltage, thermal resistance, SOA, etc., of 500-1000 V power Cryo-MOSFETs operated in liquid nitrogen (LN2, T=77 K) at drain currents in the 10-100 A range have been measured. The results are reported. FREDFETs are also discussed.

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OpenAlex reports 22 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

At cryogenic temperatures MOS field-effect high-voltage power transistors behave as super-semiconductor switches (Cryo-MOSFET). Important parameters such as on-resistance, breakdown voltage, thermal resistance, SOA, etc., of 500-1000 V power Cryo-MOSFETs operated in liquid nitrogen (LN2, T=77 K) at drain currents in the 10-100 A range have been measured. The results are reported. FREDFETs are also discussed.

Key concepts: Power MOSFET, Materials science, MOSFET, Power semiconductor device, Breakdown voltage, Liquid nitrogen, Optoelectronics, Transistor

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