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2002•Unpublished venueRequires access

The behaviour of very high current density power MOSFETs

J. P. Evans, Gehan A. J. Amaratunga

Open publisher page 12 citations

Abstract

This paper presents a new description of the operation of a power MOSFET which is aimed at assisting in the design of devices which operate at high current densities. We analyse the charge balances within a power MOSFET (DMOS or UMOS) and show how these conspire to dictate the operation of the device. We report on the manufacture of a UMOS device with 0.8 /spl mu/m cells with 0.4 /spl mu/m trench widths=540/spl times/10/sup 6/ cells/in/sup 2/.

About this research paper

What this paper is about

This paper presents a new description of the operation of a power MOSFET which is aimed at assisting in the design of devices which operate at high current densities. We analyse the charge balances within a power MOSFET (DMOS or UMOS) and show how these conspire to dictate the operation of the device. We report on the manufacture of a UMOS device with 0.8 /spl mu/m cells with 0.4 /spl mu/m trench widths=540/spl times/10/sup 6/ cells/in/sup 2/.

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OpenAlex reports 12 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

This paper presents a new description of the operation of a power MOSFET which is aimed at assisting in the design of devices which operate at high current densities. We analyse the charge balances within a power MOSFET (DMOS or UMOS) and show how these conspire to dictate the operation of the device. We report on the manufacture of a UMOS device with 0.8 /spl mu/m cells with 0.4 /spl mu/m trench widths=540/spl times/10/sup 6/ cells/in/sup 2/.

Key concepts: Power MOSFET, MOSFET, Trench, Electrical engineering, Power semiconductor device, Current (fluid), Power (physics), Optoelectronics

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