2011•Microelectronic EngineeringRequires access

Thickness and material dependence of capping layers on flatband voltage (VFB) and equivalent oxide thickness (EOT) with high-k gate dielectric/metal gate stack for gate-first process applications

Changhwan Choi

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Key concepts: Equivalent oxide thickness, Materials science, High-κ dielectric, Metal gate, Scaling, Dielectric, Optoelectronics, Gate oxide

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Thickness and material dependence of capping layers on flatband voltage (VFB) and equivalent oxide thickness (EOT) with high-k gate dielectric/metal gate stack for gate-first process applications — Research Paper | ScholarLens