2012•Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomenaRequires access
Dummy Oxide Removal in High-K Last Process Integration how to Avoid Silicon Corrosion Issue
Farid Sebaai, Anabela Veloso, Hiroaki Takahashi, Antoine Pacco, Martine Claes, Marc Schaekers, Stefan De Gendt, Paul Mertens, Herbert Struyf
Open publisher page 1 citations
Abstract
The industry has diverged into two main approaches for high-k and metal gate (HKMG) integration. One is the so called gate-first. The other is gate-last, also called replacement metal gate (RMG) where the gate electrode is deposited after junctions formation and the high-k gate dielectric is deposited in the beginning of the flow (high-k first-RMG) or just prior to gate electrode deposition (high-k last-RMG) [1-. We can distinguish two RMG process flows called either high-k first or high-k last. In RMG high-k first, poly silicon is removed on top of a TiN etch stop layer whereas on high-k last poly silicon is removed on top of a dummy oxide layer. This dummy oxide has also to be removed in order to redeposit a novel high-k and work function metal (Figure 1).