2012•Energy ProcediaOpen access

Research of Solar Inverter Based on Silicon Carbide JFET Power Device

Sanbo Pan, Lixin Li, Zongxiang Chen

Abstract

This paper presents the research of a high frequency, high efficiency Solar inverter using silicon carbide power semiconductor device. Compared to silicon power devices, the silicon carbide power device is more suitable for solar power inverter due to its good electric characteristics. This paper presents the design of sic power semiconductor device based solar inverter. The experiment results of a 1 kW silicon carbide JFET based inverter showed about 3% efficiency improvement by a silicon carbide JFET-based inverter over silicon IGBT based inverter.

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Key concepts: JFET, Inverter, Silicon carbide, Materials science, Insulated-gate bipolar transistor, Power (physics), Silicon, Electrical engineering