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Deep Level Transient Spectroscopy Measurements in InSe Single Crystals

G. Micocci, Aurora Rizzo, Pietro Siciliano, A. Tepore

Abstract

Deep majority carrier traps are studied by means of deep level transient spectroscopy in n-InSe single crystals grown by the Bridgman-Stockbarger method. Three trapping levels are found at 0.32, 0.50, and 0.78 eV below the conduction band. The concentration profiles of these traps are also reported.

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Key concepts: Conduction band, Deep-level transient spectroscopy, Trapping, Materials science, Spectroscopy, Analytical Chemistry (journal), Transient (computer programming), Chemistry