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2006•Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physicsRequires access

Negative U‐properties of the oxygen‐vacancy in ZnO

D. Pfisterer, Joachim Sann, Detlev M. Hofmann, Bruno Meyer, Thomas Frank, Gerhard Pensl, Ramón Tena‐Zaera, J. Zúñiga‐Pérez, C. Martínez‐Tomás, V. Muñoz‐Sanjosé

Open publisher page 12 citations

Abstract

Abstract It is shown that the intensity of the oxygen vacancy (VO) related emission in ZnO at 2.45 eV correlates to the concentration of the donor level E4. E4 is located 530 meV below the conduction band and attributed to the VO0/++ recharging. Deep level transient spectroscopy (DLTS) experiments with optical excitation locate the VO2+/+ level position 140 meV below the conduction band and give evidence for the “negative‐ U” properties of the oxygen vacancies in ZnO. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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What this paper is about

Abstract It is shown that the intensity of the oxygen vacancy (VO) related emission in ZnO at 2.45 eV correlates to the concentration of the donor level E4. E4 is located 530 meV below the conduction band and attributed to the VO0/++ recharging. Deep level transient spectroscopy (DLTS) experiments with optical excitation locate the VO2+/+ level position 140 meV below the conduction band and give evidence for the “negative‐ U” properties of the oxygen vacancies in ZnO. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Available abstract

Abstract It is shown that the intensity of the oxygen vacancy (VO) related emission in ZnO at 2.45 eV correlates to the concentration of the donor level E4. E4 is located 530 meV below the conduction band and attributed to the VO0/++ recharging. Deep level transient spectroscopy (DLTS) experiments with optical excitation locate the VO2+/+ level position 140 meV below the conduction band and give evidence for the “negative‐ U” properties of the oxygen vacancies in ZnO. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Key concepts: Conduction band, Deep-level transient spectroscopy, Oxygen, Vacancy defect, Excitation, Spectroscopy, Thermal conduction, Materials science

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