ScholarLens Back to search
2003•Unpublished venueRequires access

High-performance MRAM technology with an improved magnetic tunnel junction material

Mizuki Motoyoshi, K. Moriyama, H. Mori, C. Fukumoto, H. Itoh, Hiroshi Kano, K. Bessho, H. Narisawe

Open publisher page 5 citations

Abstract

This work is a report on high-performance MRAM technology. 0.4/spl times/0.8 /spl mu/m/sup 2/ MTJ elements were successfully integrated with 0.35 /spl mu/m CMOS technology without process-induced damage. A magnetoresistance (MR) ratio of more than 55% and the read/write operating point were obtained by introducing an improved magnetic tunnel junction (MTJ) material. The short-pulse writing in combination with an improved cell structure suggests that MRAM has a great deal of potential for low power applications.

About this research paper

What this paper is about

This work is a report on high-performance MRAM technology. 0.4/spl times/0.8 /spl mu/m/sup 2/ MTJ elements were successfully integrated with 0.35 /spl mu/m CMOS technology without process-induced damage. A magnetoresistance (MR) ratio of more than 55% and the read/write operating point were obtained by introducing an improved magnetic tunnel junction (MTJ) material. The short-pulse writing in combination with an improved cell structure suggests that MRAM has a great deal of potential for low power applications.

Why it matters

OpenAlex reports 5 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

This work is a report on high-performance MRAM technology. 0.4/spl times/0.8 /spl mu/m/sup 2/ MTJ elements were successfully integrated with 0.35 /spl mu/m CMOS technology without process-induced damage. A magnetoresistance (MR) ratio of more than 55% and the read/write operating point were obtained by introducing an improved magnetic tunnel junction (MTJ) material. The short-pulse writing in combination with an improved cell structure suggests that MRAM has a great deal of potential for low power applications.

Key concepts: Magnetoresistive random-access memory, Tunnel magnetoresistance, CMOS, Materials science, Tunnel junction, Optoelectronics, Magnetoresistance, Electrical engineering

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
High-performance MRAM technology with an improved magnetic tunnel junction material — Research Paper | ScholarLens