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2001•Journal of Photopolymer Science and TechnologyOpen access

Resist Outgassing by EUV Irradiation.

Takeo Watanabe, Kazuhiro Hamamoto, Hiroo Kinoshita, Harushige Tsubakino, Hideo Hada, Hiroshi Komano, Masayuki Endo, Masaru Sasago

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Abstract

Extreme ultraviolet (EUV) lithography requires the vacuum environment for the exposure. The hydrocarbons outgassing ions species affects the reflectivity of the mask and the imaging mirror under EUV irradiation. The photo-induced outgassing was investigated for both the non-chemically amplified resists and the chemically amplified resists which can be used for EUVL. We found out the chemically amplifed positive tone resist which has low outgassing characteristics under the EUV irradiation. Furthermore, it is found that the photodecomposition occurred under EUV irradiation from the resist outgassing investigation.

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What this paper is about

Extreme ultraviolet (EUV) lithography requires the vacuum environment for the exposure. The hydrocarbons outgassing ions species affects the reflectivity of the mask and the imaging mirror under EUV irradiation. The photo-induced outgassing was investigated for both the non-chemically amplified resists and the chemically amplified resists which can be used for EUVL. We found out the chemically amplifed positive tone resist which has low outgassing characteristics under the EUV irradiation. Furthermore, it is found that the photodecomposition occurred under EUV irradiation from the resist outgassing investigation.

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Available abstract

Extreme ultraviolet (EUV) lithography requires the vacuum environment for the exposure. The hydrocarbons outgassing ions species affects the reflectivity of the mask and the imaging mirror under EUV irradiation. The photo-induced outgassing was investigated for both the non-chemically amplified resists and the chemically amplified resists which can be used for EUVL. We found out the chemically amplifed positive tone resist which has low outgassing characteristics under the EUV irradiation. Furthermore, it is found that the photodecomposition occurred under EUV irradiation from the resist outgassing investigation.

Key concepts: Outgassing, Extreme ultraviolet lithography, Resist, Extreme ultraviolet, Materials science, Irradiation, Lithography, Optics

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