Francis P. Fehlner
Abstract
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Thin silicon dioxide films on silicon have been grown by thermal oxidation in dry oxygen at 400°C. The kinetics of the process and the effect of both impurities and ultraviolet irradiation have been examined and compared with models of the oxidation process.
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Thin silicon dioxide films on silicon have been grown by thermal oxidation in dry oxygen at 400°C. The kinetics of the process and the effect of both impurities and ultraviolet irradiation have been examined and compared with models of the oxidation process.
Key concepts: Silicon, Thermal oxidation, Silicon dioxide, Impurity, Materials science, Kinetics, Oxide, Silicon oxide