1992•Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIERequires access
Growth kinetics and properties of ultrathin films of silicon dioxide
Vjacheslav V. Khatko, N. V. Rumak
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Abstract
The growth kinetics, the structure, and the properties of films up to 25 nm thickness, obtained by thermal oxidation in dry oxygen of silicon substrates doped by phosphorus, are studied. It is shown that on a definite stage of oxidation, the anomalies connected with the structural transformations in oxides are observed in the kinetics, the change of oxide density, and the quantity of stresses in the system Si-SiO2. The results obtained are explained on the basis of the silicon heterogeneous oxidation reaction suggested by the authors earlier.