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1991•Japanese Journal of Applied PhysicsOpen access

Metalorganic Vapor Phase Epitaxial Growth and Properties of GaN/Al0.1Ga0.9N Layered Structures

Kenji Itoh, Takeshi Kawamoto, Hiroshi Amano, Kazumasa Hiramatsu, Isamu Akasaki

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Abstract

High-quality, well-controlled GaN/Al0.1Ga0.9N layered structures with periodicity varying from 4.5 nm to 60 nm have been successfully grown on (0001) sapphire substrates by Metalorganic Vapor Phase Epitaxy (MOVPE). The layered structure has been confirmed by double-crystal X-ray diffractometry. Photoluminescence peak energy showed a shift toward the higher-energy side with decreasing thickness of the GaN well layer, which is in good agreement with the calculation obtained from the Kronig-Penny analysis.

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High-quality, well-controlled GaN/Al0.1Ga0.9N layered structures with periodicity varying from 4.5 nm to 60 nm have been successfully grown on (0001) sapphire substrates by Metalorganic Vapor Phase Epitaxy (MOVPE). The layered structure has been confirmed by double-crystal X-ray diffractometry. Photoluminescence peak energy showed a shift toward the higher-energy side with decreasing thickness of the GaN well layer, which is in good agreement with the calculation obtained from the Kronig-Penny analysis.

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Available abstract

High-quality, well-controlled GaN/Al0.1Ga0.9N layered structures with periodicity varying from 4.5 nm to 60 nm have been successfully grown on (0001) sapphire substrates by Metalorganic Vapor Phase Epitaxy (MOVPE). The layered structure has been confirmed by double-crystal X-ray diffractometry. Photoluminescence peak energy showed a shift toward the higher-energy side with decreasing thickness of the GaN well layer, which is in good agreement with the calculation obtained from the Kronig-Penny analysis.

Key concepts: Metalorganic vapour phase epitaxy, Epitaxy, Sapphire, Vapor phase, Photoluminescence, Materials science, Layer (electronics), Optoelectronics

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